Abstract
The information about location, energy and angular distribution of secondary electrons emerging from the irradiated sample is very important for the reconstruction of scanning electron microscopy images and to quantify secondary electron potential contrast measurements. In this paper, an original multiple collisions Monte Carlo code is used to calculate the distribution of the emerging sites, the angular distribution of secondary electrons emitted in silicon at 0.5, 1.0, and 7keV beam energy. In particular, the angular distribution, and the secondary electron yield are calculated as function of the surface barrier energy, according to the quantum-mechanical model.
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