Abstract
A low dimensional tight-binding (TB) based bandstructure calculation program is developed for double-gate MOSFETs (DG-FETs) to model the effects of channel orientation, transverse electric field, stress, and geometry-induced quantum confinement. Electron mobility in the strained channel is then evaluated using the Monte Carlo (MC) method, based on the calculated bandstructure. It is concluded that electron mobility is enhanced by the splitting of conduction band valleys and the change of electron effective mass, as a function of layer thickness, crystal orientation and stress in strained Si DG-FETs.
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