Abstract
RF power and DC bias have been simultaneously applied to the target in a conventional magnetron sputtering system in order to control the growth kinetics of W thin films using argon gas for sputtering. A Monte Carlo simulation based on physical models of ion-plasma sputtering was carried out to study the dependence of Ar concentration in the tungsten film on the parameters of the discharge, and on the flow of argon atoms onto the substrates. An energy of 180 eV was proposed as a threshold for accommodating Ar atoms in growing W films.
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