Abstract
An ensemble Monte Carlo particle simulation of AlInAs/GaInAs heterojunction bipolar transistors was carried out to investigate the influence of the hot-electron transport regime in the base on the steady-state and high-frequency characteristics of the device. It was found that the electron transport in the base is ballistic or near-ballistic for base thickness WB<0.06 mu m and is diffusive for WB>0.2 mu m.
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