Monte Carlo investigation of the MBE growth of GaAs on the surfaces with different crystallographic orientations

Abstract

MBE growth of GaAs on the surfaces with different orientations is studied by kinetic Monte Carlo simulations. The model allows taking into account the most relevant processes and reconstructions on the surfaces. The simulations show that islands grown on the (111)A surface have a chaotic shape whereas those on the (001) and (110) surfaces have more ordered structure due to the features of the surface structure. The diffusion length of Ga adatoms is observed to be dependent on the growth rate and V/III flux ratio. This influence is stronger for the (111) and (110) surfaces demonstrating that diffusion is weaker on the (001) surface. However, the diffusion length reduces with increasing growth rate and As2/Ga flux ratio tending to become equal for all surfaces under consideration.