Monte Carlo Investigation Of Carrier-Carrier Interaction And Ultrafast Cooling Of Hot Photoexcited Carriers In GaAs

Abstract

The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.