Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

Abstract

AbstractMonte Carlo computations of the electron backscattering coefficient as a function of the primary energy in the range 500 eV–5 keV for several bulk targets (Al, Si, Cr, Ni, Cu, Ge, Au) are provided. Monte Carlo simulated backscattering coefficients from several surface thin layers are also provided as a function of the electron primary energy and film thicknesses. While the elastic scattering cross‐sections have been calculated by the relativistic partial wave expansion method, the stopping power data utilized by the Monte Carlo code are taken from the literature. Copyright © 2008 John Wiley & Sons, Ltd.