Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Abstract

Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron–hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.