Abstract
The velocity field characteristics of II–VI compound semiconductors at 77K have been obtained by the Monte Carlo simulation technique. The results agree with the available experimental data and with those obtained by solving the Boltzmann Transport Equation analytically. The simulation technique is described in detail and various aspects regarding the convergence of the simulation are discussed. The carrier distribution function has also been obtained from the simulation. The effects of the various simulation parameters, as well as those of the ionized impurity concentration, on the mobility values for the different semiconductors are discussed and results are presented.
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