Abstract
Two-dimensional scattering rates are formulated using a two-subband triangular well approximation for GaInAs/InP and GaInAs/AlInAs single-well heterostructures, and two-dimensional electron gas (2-DEG) velocity characteristics are calculated using one-particle Monte Carlo simulations. Although the alloy scattering in GaInAs limits the low field mobility at low temperatures, a significant increase in the velocity characteristics is obtained for the 2-DEG at both 77 and 300 K. This result clearly illustrates that GaInAs is a promising material for high speed devices at 300 K and even at 77 K.
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