Abstract
Monte Carlo calculations were carried out to estimate the spatial distribution of low-energy secondary and backscattered electrons emitted from Si bombarded by low-energy (<4 keV) electron beams. The calculation includes Mott scattering cross sections for elastic scattering, experimental and calculated electron inelastic mean free paths, the Streitwolf excitation function for production of secondary electrons, a simple cascade for transport of secondaries, and a surface refraction condition for emission. The spatial distribution of emitted secondary electrons was observed to be directly related to that of backscattered electrons in peripheral areas. The role of low-energy electron emission in the efficiency and resolution of direct write electron beam processes is discussed and results of the calculation are presented.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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