Abstract
Abstract In this work, we report on calculations of the electronic channelling energy loss of hydrogen and helium ions along Si〈1 0 0〉 and Si〈1 1 0〉 axial directions for the low energy range by using the Monte Carlo simulation code. Simulated and experimental data are compared for protons and He ions in the 〈1 0 0〉 and 〈1 1 0〉 axis of silicon. A reasonable agreement was found. Computer simulation was also employed to study the angular dependence of energy loss for 0.5, 0.8, 1, and 2 MeV channelled 4He ions transmitted through a silicon crystal of 3 μm thickness along the 〈1 0 0〉 axis.
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