Monte‐Carlo‐based simulation study of ion‐implantation in gallium oxide devices

Abstract

A computational study is done to carry out ion implantation for isolation in gallium oxide based devices using SRIM‐2013 simulation tool. In this paper, deep acceptors for gallium oxide like Mg‐ and N‐based implantation results and damage physics are discussed. Displacement per atoms (DPA)‐based calculation is done to compare damage analysis for N and Mg ion implantation at 50 KeV beam energy. DPA calculations show that Mg generates more damages and vacancies to target gallium oxide with compared to N ion implantation. Furthermore, ion implantation doses are also calculated for isolation of 300 nm target depth of gallium oxide. Multiple energy ion‐ implantation for nitrogen (35/70/140 KeV) and for magnesium (50/100/165 KeV) in the gallium oxide target is simulated. Lighter ion nitrogen results into more ionization of gallium oxide compared to heavier magnesium ions for the same projected range. Simulation results show that a total energy of 142 KeV (57.96%) of nitrogen ion is lost during ionization process, whereas, for magnesium ion, the total energy loss is 89.49 KeV (28.41%) during ionization.