Monte Carlo analysis of the oxygen knock-on effects induced by synchrotron x-ray radiation in the Bi2Sr2CaCu2O8+δ superconductor

Abstract

We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{r}}_{2}\mathrm{CaC}{\mathrm{u}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ high-temperature superconductor induced by intense synchrotron hard x-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing x-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely bound oxygen atoms in this material ${T}_{d}=0.{15}_{\ensuremath{-}0.01}^{+0.025}\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$.