Abstract
By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 100 GHz are predicted in InGaAs diodes, being significantly higher, around 400 GHz, in the case of GaN structures. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes.
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