Abstract
We review recent results concerning the microscopic analysis of electronic noise in semiconductor unipolar structures in the frequency range where 1/f noise can be neglected. Calculations are based on a Monte Carlo simulator of the carrier motion self-consistently coupled with a Poisson solver. Both current- and voltage-noise operation modes are considered and their respective advantages illustrated. The analysis is applied to structures with increasing degree of complexity, that is: homogeneous materials, resistors, n + nn + diodes., Schottky-barrier diodes and GaAs MESFETs. The main sources of noise like diffusion, generation-recombination, coupling between velocity and local electric field fluctuations, etc. are treated in the presence of electric fields of arbitrary strength. Results should constitute the basis for a physical interpretation of electronic noise in most semiconductor materials and devices thus providing inputs for improving quality and reliability figures of merit.
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