Abstract

Steps of monolayer height, when in low density present on facets of liquid phase epitaxial GaAs, constitute almost atomically flat growth faces. We achieve a ration of monostep spacing to step height as high as 10 6: 1 on (100)-oriented facets. The 2.85 Å high monosteps arrange themselves inside closely adjoining square-shaped facets. The development of the facets is initiated by mesas of 0.5 × 0.5 mm 2 area, which are produced on the substrate prior to epitaxy. The monosteps on the facets appear in spiral or concentric patterns or in arrays of nearly straight steps. We have correlated the different monostep patterns with their particular step generation mechanism. The monosteps are mapped by optical and atomic force microscopy.

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