7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
https://doi.org/10.1016/0022-0248(94)90970-9
Copy DOIJournal: Journal of Crystal Growth | Publication Date: Apr 1, 1994 |
Citations: 11 |
Steps of monolayer height, when in low density present on facets of liquid phase epitaxial GaAs, constitute almost atomically flat growth faces. We achieve a ration of monostep spacing to step height as high as 10 6: 1 on (100)-oriented facets. The 2.85 Å high monosteps arrange themselves inside closely adjoining square-shaped facets. The development of the facets is initiated by mesas of 0.5 × 0.5 mm 2 area, which are produced on the substrate prior to epitaxy. The monosteps on the facets appear in spiral or concentric patterns or in arrays of nearly straight steps. We have correlated the different monostep patterns with their particular step generation mechanism. The monosteps are mapped by optical and atomic force microscopy.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.