Monomer methylmethacrylate (MMA) incorporated hybrid low-k thin films

Abstract

Low-dielectric-constant hybrid thin films were deposited by sol-gel spin coating technique, using methyl methacrylate and tetraethyl orthosilicate as organic and inorganic precursors, respectively. The deposited hybrid thin films were annealed at different temperatures in the range 200°C–500°C. Fourier transform infrared spectroscopic study reveals the presence of Si-O-Si and C=C bonds, which confirms the successful assimilation of carbon in the deposited hybrid thin film. The carbon incorporation is responsible for lowering the dielectric constant (k) in the deposited film. The k value was determined to be 2.51, as measured from the highfrequency capacitance-voltage curve. This is a significant contribution, since the deposition method did not involve polymerization. The electrical characteristics, such as border trap charge, interface trap density, and fixed oxide charge were estimated to be 4.10 × 1015 cm−2, 1.94 × 1011 cm−2 eV−1, and 1015 cm−2, respectively, indicating the optimum annealing temperature to be 200°C.