Abstract
This paper presents the first integrated temperature sensor in a SiC power mosfet. An analytical model has been proposed to assess its behavior up to 300°C. We present the tested design and its advantages compared to other solutions. We also propose possible optimizations in order to simplify it and reduce its size. 2.25 mm2 power mosfets have been fabricated with and without temperature sensor. Measurements show that the temperature sensor does not impact the power mosfet characteristics and its integration does not demand supplementary process steps. To demonstrate the functionality of our integrated sensor, we have calibrated the temperature dependence of its resistance to assess the internal temperature of the device at different bias.
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