Abstract
Monolithically integrated InGaAs p-i-n amplifiers have been successfully fabricated. The structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFETs, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminium phosphorous oxide as gate insulator. At 400 Mb/s, the receiver sensitivity is better than -27 dBm for 1*10/sup -9/ bit error rate. >
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