Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System

Abstract

This work investigates a monolithic integrated pulse width modulation (PWM) circuit based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs). The PWM circuit contains comparator, hysteresis comparator, and sawtooth generator, which all show stable performances. The PWM circuit is able to generate a 500 kHz high-frequency PWM signal with a 5.5 V swing and an adjustable duty cycle from 30% to 70%. These results exhibit a feasible example to achieve the all-GaN monolithic integration of signal and control blocks in smart power ICs by using GaN MIS-HMETs.