Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication.

Piotr J Cegielski,Thorsten Wahlbrink,Max C Lemme,Satender Kataria,Caroline Porschatis,Daniel Schall,Jens Bolten,Stephan Suckow,Annamaria Petrozza,Carlo A R Perini,Anna Lena Giesecke,Stefanie Neutzner,Marina Gandini,Bartos Chmielak

doi:10.1021/acs.nanolett.8b02811

Abstract

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III-V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 μJcm-2 at room temperature for monolithically integrated lasers, which are complementary metal-oxide-semiconductor compatible and can be integrated in the back-end-of-line processes.

Highlights

Silicon photonics is recognized as a key photonic integration technology due to its compatibility with the complementary metal−oxide−semiconductor (CMOS) manufacturing infrastructure and the potential for integration with back-end-of-line Si microelectronics and addresses applications ranging from telecommunications[1] to gas sensing[2] to lab-onchip technology.[3]
Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new photonic integrated circuits (PICs) architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III−V semiconductors
Due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography has been established

Summary

Nano Letters

We present microdisc methylammonium lead iodide (MAPbI3) perovskite lasers manufactured with a conventional top-down patterning process including optical lithography. In a CW laser, the FWHM is expected to narrow with increasing pump power due to the gain saturation by the lasing mode.[37] In the case of the perovskite disc laser pumped by short pulses, gain does not saturate because the output is multimode This leads to the amplification of spontaneous emission noise, which couples to the cavity modes and broadens the laser lines.[38] At very high excitation, this ASE noise is so strong that it leads to overlapping of the WGMs (Figure 6a, gray line), in line with the observed increase of fwhm and observed in ref 18. The spectral positions of the WGMs shifted toward blue with increasing excitation[39] (Figure 6c, solid lines) followed by an increase in FSR (e.g., from 5.08 nm at 8.22 μJcm−2 to 6.5 nm at 14.1 μJcm−2 between modes 2 and 3) We attribute this to the change of the dielectric function of the MAPbI3, which modifies the optical length of the circumference of the disc resonators.

Author Contributions

Findings

■ REFERENCES