Abstract
We proposed a monolithically integrated narrow linewidth semiconductor laser composing of an active section and a passive narrow band reflector (NBR) based on waveguide Bragg gratings. The π phase shifted Bragg grating is used in the active section to obtain single longitudinal mode output. The NBR is consist of a taper waveguide, π phase shifted antisymmetric Bragg grating (π-PS-ASBG) and uniform Bragg grating. Two sections are integrated on an identical InP wafer and share one continuous waveguide. Because of the hybrid mode resonance in the passive section, it has a relatively long effective length to narrow the linewidth of laser. Narrow linewidth about 16 kHz is obtained when the laser's length is 800 µm and the coupling coefficient of the π-PS-ASBG is 180 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> .
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