Abstract
High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be i...
Highlights
Infrared photodetectors can be applied to a wide range of applications, including free-space communication, surveillance, tracking and missile interception, chemical sensing, and biomedical imaging.[1]
We report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy
High-performance infrared photodetectors have been demonstrated in HgCdTe film, InGaAs/GaAs quantum wells (QWs), In(Ga)As/GaAs quantum dots (QDs), and InAs/GaSb type-II superlattice.[2−6]
Summary
Infrared photodetectors can be applied to a wide range of applications, including free-space communication, surveillance, tracking and missile interception, chemical sensing, and biomedical imaging.[1]. The III−V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm−2.
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