Abstract
High speed results on In0.53, Ga0.47As/ln0.52Al0.aAs (on InP) planar doped heterojunction-FETs and 1.3–1.6μ wavelength-compatible metal-semiconductor-metal photodetector devices fabricated from a vertically stacked device design with the FET overlaying the detector structure are reported. A cut-off frequency for unity current gain of 30GHz was achieved with a 1μ gatelength. The photodetector at 7 V bias had a photoresponse and dark current of 0.48 A/W and 24 nA, respectively. At 10 V bias the FWHM of the impulse response was 65 ps. A simple near-planar monolithically integrated photoreceiver was successfully fabricated requiring no special processing or regrowth steps.
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