Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Abstract

Reported is super-luminescent emission under room-temperature, continuous-wave conditions from GaSb quantum-well-based light emitting diodes (LED), monolithically integrated on Si (100) substrates. The LEDs are realised with substrate growth temperature under 500°C for the entire process and the Si (001) substrate is non-miscut. The lattice mismatch at the AlSb/Si interface is accommodated by interfacial misfit dislocation arrays (IMF) resulting in low defect-density III-Sb material without thick metamorphic buffers. The devices are grown in etched trenches on the Si substrate to reduce anti-phase domains in the III-Sb. The n-Si substrate is contacted directly and thus current flows through the III-Sb/Si IMF interface. The diodes have extremely low leakage current density (Jleakage<0.2 A/cm2) in the reverse bias (−10 V) and show very good diode characteristics but exhibit a slightly elevated forward resistance (R∼ 27 Ω), likely to be because of the IMF. The super-luminal spectra peaks at 2.14 µm with maximum output power ∼0.125 mW.