Monolithically-integrated BiVO4/p+-n GaAs1-xPx tandem photoanodes capable of unassisted solar water splitting

Abstract

Monolithically-integrated tandem photoanodes were fabricated on substrates consisting of epitaxial n-GaAs1-xPx (x ≅ 0.32) grown on n+-GaAs wafers. A p+-n junction photovoltaic (PV) cell was first formed by zinc diffusion into the n-GaAs0.68P0.32 from a deposited ZnO coating. After diffusion the ZnO serves as a transparent electrical contact to the resulting p+-GaAs0.68P0.32 surface layer. Transparent, conducting SnO2:F provides chemical and mechanical protection for the ZnO and the underlying PV cell, and it electrically connects this cell to a top BiVO4 photocatalyst layer. In some photoanodes, a WO3 thin film was interposed between the SnO2:F and BiVO4. All oxide coatings were produced by ultrasonic spray pyrolysis except WO3, which was spin coated. Unassisted (unbiased) solar water splitting was achieved, with a solar-to-hydrogen efficiency approaching 2%, without addition of any co-catalyst to the BiVO4 surface. This work can provide insights to other researchers regarding scalable, low cost approaches for the planar monolithic integration of oxide photoanode materials with PV cells to create new tandem devices.