Abstract
We have grown monolithic multi-color InAs quantum dots (QDs) for use as a near-infrared (NIR) broadband light source. Our previously developed rotational metal mask enables selective-area growth of QD ensembles with emission peak wavelengths controlled by strain-reducing layers thicknesses, varying the emission approximately 1.2–1.3 μm. The peak shift value was up to 120 nm, and a combined 160-nm-bandwidth emission spectrum was achieved. Further, the emission spectra shapes were controlled using specific optical excitation powers for each QD ensemble. These results demonstrate the effectiveness of multi-color QDs as a spectrum-shape-controllable NIR broadband light source, particularly suited for optical coherence tomography.
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