Abstract
This work reports on the demonstration and investigation of short-wave infrared In0.83Ga0.17As photodetectors with cutoff wavelength of 2.5 μm monolithically grown on GaP and GaP/Si (001) substrates. The lattice mismatch of the photodetector structure is about +10% to the substrates and the photodetector layers are fully relaxed from x-ray diffraction measurement. Distinct photoluminescence spectra are observed even at room temperature. The resistance area product is 10.4 and 9.3 Ωcm2, and 2.0 μm responsivity is 0.49 and 0.41 A W−1 at 300 K for the devices on GaP and GaP/Si substrates, respectively. The 300 K peak detectivity at 2.0 μm of about 1.2 × 1010 and 1.0 × 1010 cmHz1/2 W−1 have been achieved for the two photodetectors.
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