Abstract
This paper presents a monolithic uncooled 8 × 8 bolometer array with polycrystalline silicon-germanium (poly-SiGe) thermistors as active elements. The poly-SiGe films are deposited by ultrahigh vacuum vapor deposition (UHV/CVD) system and the dependence of the temperature coefficient of resistance (TCR) on annealing temperature has been investigated. To decrease the thermal conductance of the bolometer, the poly-SiGe thermistor was formed on a four leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the bolometer array with the MOS readout circuitry. The measurements and calculations show that the mean responsivity is 1.07 × 104 V/W with an uncorrected uniformity of 10.5% and a thermal response time of 10.5 ms, and the detectivity of 3.75 × 108 cm Hz1/2/W is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Infrared and Millimeter Waves
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
