Abstract
Passive and active tunable capacitors for RF applications are discussed and compared in this paper. In silicon IC technologies passive tunable capacitors are either based on the p-n junction or the metal-semiconductor junction, i.e. the MOS-structure. Active capacitors discussed in this paper are based on the Miller effect or on the current steering principle (Gilbert cell). Modeling issues are discussed and measurement results presented for the passive structures. For active circuits the comparison is based on simulations and experimental results obtained from VCO circuits.
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