Abstract
In this letter, we propose and numerically investigate a new vertical-cavity surface-emitting laser (VCSEL) structure consisting of a nearly lambda-thick active optical cavity sandwiched between two planar monolithic subwavelength high-index-contrast gratings (MHCGs) etched directly into the semiconductor layers surrounding the optical cavity. The structure allows the reduction of the vertical thickness of the subsequent MHCG VCSEL to roughly 0.6 $\mu \text{m}$ for emission at 980 nm. Compared with a conventional all-semiconductor VCSEL with distributed Bragg reflector mirrors, the MHCG VCSEL has a shorter effective cavity length and thus a shorter roundtrip cavity time. Our proposed design enables the fabrication of VCSELs with lattice-matched mirror layers in all common semiconductor optoelectronic material systems, or alternatively VCSELs with hybrid HCGs.
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