Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate**Project supported by the National Natural Science Foundation of China (Grant Nos. 51472229, 61422405, and 11574301), the Natural Science Foundation of Tianjin (Grant No. 14JCQNJC01000), and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 2016M600231).

Abstract

The epitaxial growth of novel GaN-based light-emitting diode (LED) on Si (100) substrate has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells (MQWs) with different well widths are grown on semi-polar () planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.