Abstract
An improved 512 x 512-element PtSi Schottky-barrier IR image sensor (512 x 512 IRCSD) has been developed using the charge sweep device (CSD) readout architecture and 1.2-[mu]m minimum design rules. Finer pattern process technology enhances the advantage of the CSD readout architecture, enlarging the fill factor without sacrificing the saturation signal level. A large fill factor of 71% is achieved in spite of a small pixel size of 26 x 20 [mu]m[sup 2]. At the Schottky-barrier detector reset voltage of 4 V, the differential temperature response with f/1.2 optics at 300 K and saturation signal level were 3.2 [times] 10[sup 4] electrons/K and 2.9 [times] 10[sup 6] electrons, respectively. The noise equivalent temperature difference was estimated as 0.033 K with f/1.2 optics at 300 K. The improved 512 x 512 IRCSD was designed to be operated either in the field or frame integration interlace modes for versatility.
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