Abstract
The monolithic integration of a ZnSe metal-semiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 muW has shown high voltage amplification sensitivity of -29.6 mV/muW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future.
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