Abstract
Monolithic perovskite–silicon tandem solar cells with MoOx hole selective contact silicon bottom solar cells show a power conversion efficiency of 8%. A thin 15 nm-thick MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was deposited on the other side of the device for direct tunneling of electrons and this silicon bottom cell structure shows ~15% of power conversion efficiency. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 3.3%. This research has confirmed that the MoOx layer simultaneously acts as a passivation layer and a hole collecting layer in this tandem structure.
Highlights
The conversion efficiency of silicon solar cells, which occupy the largest share of the photovoltaic market [1], is approaching the maximum theoretical efficiency [2]
Molybdenum oxide is used as a carrier selective contact material in the bottom cells, which can play the role of a hole transport layer without a conventional p-n junction
Through the monolithic perovskite–silicon tandem solar cells, it was shown that the proposed new structure worked as a tandem solar cell
Summary
The conversion efficiency of silicon solar cells, which occupy the largest share of the photovoltaic market [1], is approaching the maximum theoretical efficiency [2]. Several research groups are involved in the development of perovskite–silicon tandem solar cells with enhanced optical absorption in the short wavelength band [5]; a group of. Various silicon bottom cell concepts are being evaluated to further improve the conversion efficiency of perovskite–silicon tandem solar cells [7]. Tandem cells are fabricated using carrier selective contact silicon solar cells as bottom structures. Molybdenum oxide is used as a carrier selective contact material in the bottom cells, which can play the role of a hole transport layer without a conventional p-n junction
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