Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching

Abstract

Stripe geometry double heterostructure lasers fabricated by selective chemical etching in a monolithic way and passivated on the resonator mirrors are described. The method of etching and the results of the characteristics of the lasers fabricated by the etching which uses the alignment of a rectangular etching mask with <100> direction in a {100} wafer are shown. The lowest threshold current density of the lasers fabricated is about 4.5 kA/cm2. A novel method of selective etching with alignment of a rectangular mask with <110> direction in a {100} wafer which produce very smooth nearly {100} facet planes appearing at the four side corners of the rectangular etched island is also described.