Abstract
A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dB/spl Omega/, respectively, while driving a 100-fF load to TTL voltage levels.
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