Abstract
A new epitaxial layer structure for the integration of a high-electron-mobility transistor (HEMT) and a metal-semiconductor-metal photodiode (MSM PD) is proposed. With the aid of an InGaAsP (λ=1.3 µm) buffer, this epitaxial layer structure has an additional function of light absorption without performance degradation of the HEMT. With this light absorption ability, the epitaxial layer structure can support a MSM PD structure and makes the fabrication process of the MSM PD identical to that of a HEMT. The characteristics of a monolithically integrated HEMT and MSM PD are presented and discussed. Measured ft and fmax are 18.7 GHz and 47 GHz, respectively, for the 1.5×100 µm2 gate HEMT, and a responsivity of 0.7 A/W at a wavelength of λ=1.3 µm has been acquired for the MSM PD.
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