Abstract
An original approach of monolithic integration of InP based heterostructures on silicon is proposed based on the peculiar properties of the heterointerface between InP and crystalline Gd2O3. When grown on a crystalline Gd2O3∕Si(111) buffer, InP takes its bulk lattice parameter as soon as the growth begins, and the lattice mismatch (7.9%) is fully accommodated by the formation of a misfit dislocation network at the InP∕Gd2O3 heterointerface. This plastic compliant effect allows the monolithic growth of good quality InAsP∕InP heterostructures on Si, as attested by room-temperature photoluminescence experiments.
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