Abstract
A low-dark-current (1–2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Similar Papers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.