Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology

Abstract

An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS) field effect transistors was fabricated. SWNTs were grown, using chemical vapor deposition, from catalyst islands located on an NMOS decoder circuit. Massive arrays of nanotube devices, each addressed individually using the NMOS circuit, were rapidly characterized. The successful monolithic integration of nanotube devices and MOS transistors creates many possibilities, including electronically addressable nanotube chemical sensor arrays.