Monolithic InGaP-GaAs HBT receiver front-end with 6 mW DC power consumption for 5 GHz band WLAN applications

Abstract

A very low power consumption (6 mW) 5 GHz band receiver front-end using InGaP-GaAs HBT technology is reported. The receiver front-end is composed of a cascode low noise amplifier followed by a double-balanced mixer with the RF transconductor stage placed above the Gilbert quad for direct-coupled connection. The RF band of this receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz IF frequency. Input-return-loss (S11) in RF port smaller than −12 dB and excellent power-conversion-gain of 35.4 dB are achieved. Input 1 dB compression point (P1dB) and input third-order intercept point (IIP3) of −24 and −3 dBm, respectively, are also achieved.