Abstract
Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design supports zero-index modes with Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.
Highlights
Silicon photonics has become the principal platform for on-chip optical telecommunications [1,2,3]
Monolithic fabrication of many silicon-based photonic devices allows for integration with existing complementary metallic-oxide-semiconductor (CMOS) technologies that currently dominate computation and communications [3,4]
As integrated silicon photonics approaches the nanoscale, solutions based on new materials are necessary to manage the confinement and behavior of light
Summary
Silicon photonics has become the principal platform for on-chip optical telecommunications [1,2,3]. The effective wavelength within this material is infinite, allowing phase-free propagation of light as well as strong nonlinear optical enhancement [13,14,15,16,17]. Such extreme properties have inspired a variety of applications, including efficient coupling between disparate modes and sub-diffraction limit waveguide design [8,18,19], electromagnetic cloaking [20,21], beam steering [22], quantum optics [23,24], and new approaches to phase-matching in nonlinear optics [17,25,26]
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