Abstract
In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.
Highlights
As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent)
Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease
Monolike ingot growth by directional solidification of Solar Grade silicon1 “МК “KazSilicon” LLP, 1 Komarova Str., Bastobe 041011, Kazakhstan 2 ECM Greentech, 109 Rue Hilaire de Chardonnet, Grenoble 38100, France 3 “Kazakhstan Solar Silicon” LLP, 223/6 Sogrinskaya Str., Ust-Kamenogorsk 070017, Kazakhstan
Summary
0,40 кристаллические деффекты отрицательно влияют на транспортные характеристики Железо. Слитки МК-Si p-типа проводимости массой ~450 кг были изготовлены по технологии НК фирмы ECM в печи PV 600 [7]. Охлаждение слитка кремния происходит в условиях гомогенизированной температуры печи для ограничения тепловых деформаций. После процесса кристаллизации кремниевые слитки были разрезаны на блоки, которые затем разрезали на пластины размером 156 × 156 мм и толщиной 180 мкм. Время жизни неосновных носителей заряда (электронов) измеряли сразу после резки без дополнительной обработки. Измерения проводили по технологии Microwave Photoconductive Decay (μ-PCD) на оборудовании Semilab WT2000. Были получены предварительные данные по возможности использования mono-like кремния для производства СЭ с высоким КПД. СЭ изготавливали в стандартной архитектуре Al-BSF, согласно которой СЭ на фронтальной поверхности содержит легированный фосфором слой (эмиттер), пассивированный слоем аморфного гидрогенезированного нитрида кремния (SiNx : H). Голубые квадраты — блоки для измерения фотолюминесценции. Оранжевая линия — блок, на котором проводили измерения методом ИКФС
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