Monolayer MoS2/n-Si Heterostructure Schottky Solar Cell

Abstract

Monolayer MoS2 has a promising optoelectronics property, with a bandgap in the visible range; the material is a potential candidate for solar cell applications. In this work, we grew MoS2 monolayers using a low-pressure chemical vapor deposition approach. To produce uniform wafer-scale MoS2 monolayer films, precursors molybdenum dioxide (MoO2) and sulfur (S) are utilized. Atomic force microscopy was used to quantify the thickness of the monolayers, and the result was validated by Raman spectroscopy. Transmission electron microscopy (TEM) was used to confirm the crystalline quality of the monolayers, and photoluminescence spectroscopy was used to evaluate their optical properties. We were able to create a Schottky solar cell with a MoS2 monolayer up to 1 cm2 area by transferring monolayer film to n-type silicon. The MoS2/n-Si Schottky solar cell demonstrated photovoltaic characteristics with a short circuit current density of 14.8 mA cm−2 and an open-circuit voltage of 0.32 V under 100 mW cm−2 illumination. The fill factor and energy conversion efficiency were 53% and 2.46%, respectively, with the highest external quantum efficiency at 530 nm being 44%.