Abstract
Abstract In this paper, we report on the effect of Al 2 O 3 /porous silicon combined treatment on the surface passivation of monocrystalline silicon (c-Si). Al 2 O 3 films with a thickness of 5, 20 and 80 nm are deposited by pulsed laser deposition (PLD). It was demonstrated that Al 2 O 3 coating is a very interesting low temperature solution for surface passivation. The level of surface passivation is determined by techniques based on photoconductance and FTIR. As a result, the effective minority carrier lifetime increase from 2 μs to 7 μs at a minority carrier density (Δ n ) of 1 × 10 15 cm −3 and the reflectivity reduce from 28% to about 7% after Al 2 O 3 /PS coating.
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