Monitoring of the current-distribution uniformity in bipolar transistors from the dependence of internal-feedback factor on collector voltage

Abstract

On the basis of the two-section model of a high-power bipolar transistor, it is shown that the slope of dependence of the small-signal feedback coefficient on the collector voltage in the presence of defects in the transistor is proportional to the defect size. The setup for the automated monitoring of the current-distribution nonuniformity in the transistor device structure from the indicated dependence with using the combination of linearly increasing and small harmonic variations in the collector voltage is described. The experimental dependences confirming the results of the theoretical analysis are presented.