Abstract
Photothermal infrared radiometry was used for monitoring the ion implantation in Si wafers implanted with phosphorus to doses in the range of 5×1010–1×1016 ions/cm2 at different implantation energies. Quantitative results on the sensitivity of the carrier plasma-dominated radiometric signal to the implantation dose and energy are presented and compared to those obtained using a commercial implantation monitoring instrument.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
