Abstract
Monitoring the GaN crystal growth process in the Na-flux method has been difficult due to the challenging growth process, namely high temperature and high pressure and corrosive nature of Ga and Na. This paper describes the unique method to monitor GaN crystal growth by measuring the electrical resistance of Ga-Na solution. We found that the electrical resistance of Ga-Na solution decreased along with the crystal growth. Furthermore, the decreasing rate of resistance is proportional to growth pressure, which influences the growth rate. During the growth process, Ga in the solution is consumed, reducing the Ga/Na ratio of the Ga-Na solution. The compositional shift toward Na-rich resulted in the decrease of electrical resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
